High efficiency 600 W gallium nitride power transistor bass amplifier

(https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2204.aspx)
(https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2204.aspx)

It all started with the design of my new speakers. For a long time I have been fond of, as a hobby, various audio projects, sometimes quite long and complex. This time, my hobby coincided with a possible future direction of professional activity.





In the past few years, gallium nitride (GaN) transistors have become increasingly widespread in power electronics. Due to their outstanding characteristics, these transistors are playing an increasingly important role in miniature switching converters of various types with very high power densities, often exceeding 100 W / cm 3 . The efficiency of converters based on GaN transistors can reach 99.5%. Due to the expansion of the conversion frequency range towards the MHz units, the magnetic components (chokes, transformers) also decrease in size significantly.





However, converter designers face numerous challenges in implementing practical GaN transistor designs. The best representatives come in open-frame design, the drivers for driving the GaN transistors are also quite miniature. There is a significant problem in optimizing the circuitry and gate circuit topology in view of the enormous switching speeds. It should also be recalled that in gallium-nitride transistors, there are practically no parasitic body diodes familiar from MOSFET switches, which affects the application.





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  1. Why GaN?





  2. Self oscillating class D amplification device





  3. GaN transistors with induced channel.





  4. Method for producing gallium nitride.





  5. Expert opinion: Semiconductor materials in electronics.





 












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